TPC8065-H mosfet equivalent, silicon n-channel mosfet.
(1) Small, thin package (2) High-speed switching (3) Small gate charge: QSW = 4.3 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 11.9 mΩ (typ.) (VGS = 4.5 V) (5).
* High-Efficiency DC-DC Converters
* Notebook PCs
* Mobile Handsets
2. Features
(1) Small, thin package (2) .
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