Datasheet Summary
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS VI-H)
High Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications
Unit: mm
- Small footprint due to a small and thin package
- High-speed switching
- Small gate charge: QSW = 3.5 nC (typ.)
- Low drain-source ON-resistance:
RDS (ON) = 21 mΩ (typ.) (VGS = 4.5 V)
- Low leakage current: IDSS = 10 μA (max) (VDS = 30 V)
- Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1...