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TPC8065-H - Silicon N-Channel MOSFET

Key Features

  • (1) Small, thin package (2) High-speed switching (3) Small gate charge: QSW = 4.3 nC (typ. ) (4) Low drain-source on-resistance: RDS(ON) = 11.9 mΩ (typ. ) (VGS = 4.5 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (6) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit TPC8065-H 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP-8 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit.

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Datasheet Details

Part number TPC8065-H
Manufacturer Toshiba
File Size 281.20 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet TPC8065-H Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFETs Silicon N-Channel MOS (U-MOS-H) TPC8065-H 1. Applications • High-Efficiency DC-DC Converters • Notebook PCs • Mobile Handsets 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate charge: QSW = 4.3 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 11.9 mΩ (typ.) (VGS = 4.5 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (6) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit TPC8065-H 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP-8 4.