TPC8129 mosfet equivalent, silicon p-channel mosfet.
(1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 17 mΩ (typ.) (VGS = -10 V) (3) Low leakage current: IDSS = -10 µA (max) .
* Lithium-Ion Secondary Batteries
* Power Management Switches
2. Features
(1) Small footprint due to a small and.
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