Datasheet4U Logo Datasheet4U.com

TPCA8068-H - MOSFET

Features

  • (1) (2) (3) (4) (5) (6) Small, thin package High-speed switching Small gate charge: QSW = 3.3 nC (typ. ) Low drain-source on-resistance: RDS(ON) = 12 mΩ (typ. ) (VGS = 4.5 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP Advance 1 2011-06-06 Rev.1.0 TPCA8068-H 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characterist.

📥 Download Datasheet

Datasheet preview – TPCA8068-H

📁 Similar Datasheet

  • TPCA8060-H - Field Effect Transistor (Toshiba Semiconductor)
  • TPCA8003-H - Field Effect Transistor Silicon N Channel MOS Type (Toshiba Semiconductor)
  • TPCA8004-H - TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Toshiba Semiconductor)
  • TPCA8005-H - Silicon N Channel MOS Type (Toshiba Semiconductor)
  • TPCA8006-H - Silicon N-Channel MOSFET (Toshiba Semiconductor)
  • TPCA8007-H - Switching Regulator Applications (Toshiba Semiconductor)
  • TPCA8008-H - Field Effect Transistor (Toshiba Semiconductor)
  • TPCA8009-H - High Speed Switching Applications (Toshiba Semiconductor)
  • TPCA8010-H - Silicon N-Channel MOSFET (Toshiba Semiconductor)
  • TPCA8011-H - Silicon N-Channel MOSFET (Toshiba Semiconductor)
Other Datasheets by Toshiba

Full PDF Text Transcription

Click to expand full text
TPCA8068-H MOSFETs Silicon N-Channel MOS (U-MOS-H) TPCA8068-H 1. Applications • • • High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets 2. Features (1) (2) (3) (4) (5) (6) Small, thin package High-speed switching Small gate charge: QSW = 3.3 nC (typ.) Low drain-source on-resistance: RDS(ON) = 12 mΩ (typ.) (VGS = 4.5 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP Advance 1 2011-06-06 Rev.1.0 TPCA8068-H 4.
Published: |