TPCA8083 Datasheet MOSFETs

Manufacturer: Toshiba

Datasheet Details

TPCA8083 MOSFETs Silicon N-channel MOS (U-MOS) TPCA8083 1.

Applications • • Motor Drivers Switching Voltage Regulators 2.

(1) (2) (3) (4) Small, thin package Low drain-source on-resistance: RDS(ON) = 2.6 mΩ (typ. ) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP Advance 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipati.