TPCC8073 - MOSFETs

Product Overview

Toshiba

Part number	TPCC8073
Manufacturer	Toshiba
File Size	233.31 KB
Description	MOSFETs
Datasheet	TPCC8073 Datasheet
Additional preview pages of the TPCC8073 datasheet.

(1) (2) (3) (4) Small footprint due to a small and thin package Low drain-source on-resistance: RDS(ON) = 3.6 mΩ (typ. ) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.3 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON Advance 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain cur.

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Published: Aug 29, 2014 |