* (1) High DC current gain: hFE = 100 to 200 (VCE = 2 V, IC = 0.4 A) (2) Low collector-emitter saturation voltage: VCE(sat) = 0.17 V (max) (IC = 1.2 A, IB = 0.12 A) (3) High-speed switching: tf = 70 ns (typ.) (IC = 1.2 A) 3. Packaging and Internal Circuit PS-8 1. Emitter 2. Emitter 3. Emitter 4. Bas
TPCP8513 Datasheet (298.12 KB)
TPCP8513
298.12 KB
Silicon npn transistor.
Bipolar Transistors Silicon NPN Epitaxial Type TPCP8513 TPCP8513 1. Applications High-Speed Switching DC-DC Converters 2. Featur.
📁 Related Datasheet
TPCP8510 Silicon NPN Transistor (Toshiba Semiconductor)
TPCP8511 Silicon NPN Transistor (Toshiba)
TPCP8512 Silicon NPN Transistor (Toshiba)
TPCP8514 Silicon NPN Transistor (Toshiba)
TPCP8516 Silicon NPN Transistor (Toshiba)
TPCP8501 MOSFET (Toshiba Semiconductor)
TPCP8504 MOSFET (Toshiba Semiconductor)
TPCP8505 Silicon NPN Transistor (Toshiba Semiconductor)
TPCP8507 Silicon NPN Transistor (Toshiba Semiconductor)
TPCP8001-H MOSFET (Toshiba Semiconductor)
