TPCP8510
TOSHIBA Transistor Silicon NPN Epitaxial Type
High-Speed, High-Voltage Switching Applications DC-DC Converter Applications
- High DC current gain: h FE = 120 to 300 (IC = 0.1 A)
- Low collector-emitter saturation: VCE (sat) = 0.14 V (max)
- High-speed switching: tf = 0.2 μs (typ)
0.33±0.05
0.05 M A
Unit: mm
2.4±0.1 2.8±0.1
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
2.9±0.1
0.05 M B
0.8±0.05
Collector-base voltage
VCBO
Collector-emitter voltage
VCEX
VCEO
Emitter-base voltage
VEBO
DC (Note 1)
Collector current
Pulse (Note...
