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TPCP8513 - Silicon NPN Transistor

Key Features

  • (1) High DC current gain: hFE = 100 to 200 (VCE = 2 V, IC = 0.4 A) (2) Low collector-emitter saturation voltage: VCE(sat) = 0.17 V (max) (IC = 1.2 A, IB = 0.12 A) (3) High-speed switching: tf = 70 ns (typ. ) (IC = 1.2 A) 3. Packaging and Internal Circuit PS-8 1. Emitter 2. Emitter 3. Emitter 4. Base 5. Collector 6. Collector 7. Collector 8. Collector ©2022-2023 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2023-01 2023-01-16 Rev.2.0 TPCP8513 4. Absolute.

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Datasheet Details

Part number TPCP8513
Manufacturer Toshiba
File Size 298.12 KB
Description Silicon NPN Transistor
Datasheet download datasheet TPCP8513 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Bipolar Transistors Silicon NPN Epitaxial Type TPCP8513 TPCP8513 1. Applications • High-Speed Switching • DC-DC Converters 2. Features (1) High DC current gain: hFE = 100 to 200 (VCE = 2 V, IC = 0.4 A) (2) Low collector-emitter saturation voltage: VCE(sat) = 0.17 V (max) (IC = 1.2 A, IB = 0.12 A) (3) High-speed switching: tf = 70 ns (typ.) (IC = 1.2 A) 3. Packaging and Internal Circuit PS-8 1. Emitter 2. Emitter 3. Emitter 4. Base 5. Collector 6. Collector 7. Collector 8. Collector ©2022-2023 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2023-01 2023-01-16 Rev.2.0 TPCP8513 4.