• Part: TPCP8511
  • Description: Silicon NPN Transistor
  • Category: Transistor
  • Manufacturer: Toshiba
  • Size: 183.09 KB
Download TPCP8511 Datasheet PDF
Toshiba
TPCP8511
Features (1) High DC current gain: h FE = 250 to 400 (IC = 0.3 A) (2) Low collector-emitter saturation: VCE(sat) = 0.18 V(max)(IB = 33 m A) (3) High-speed switching: tf = 38 ns(typ.) 3. Packaging and Internal Circuit PS-8 1. Collector 5. Emitter 2. Collector 6. Collector 3. Collector 7. Collector 4. Base 8. Collector 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage VCBO VCEX Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (pulsed) Base current Collector power dissipation Collector power dissipation VCEO VEBO (Note 1) (Note 1) (t = 10 s) (Note 2) (DC) (Note 2) Junction temperature Tj  Storage temperature Tstg -55 to 150 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant...