Datasheet Summary
Bipolar Transistors Silicon NPN Epitaxial Type
1. Applications
- High-Speed Switching
- DC-DC Converters
2. Features
(1) High DC current gain: hFE = 120 to 240 (VCE = 2 V, IC = 0.3 A) (2) Low collector-emitter saturation voltage: VCE(sat) = 0.15 V (max) (IC = 1.0 A, IB = 0.1 A) (3) High-speed switching: tf = 170 ns (typ.) (IC = 1.0 A)
3. Packaging and Internal Circuit
PS-8
1. Emitter 2. Emitter 3. Emitter 4. Base 5. Collector 6. Collector 7. Collector 8. Collector
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Toshiba Electronic Devices & Storage Corporation
Start of mercial production
2023-01
2023-01-16 Rev.2.0
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