TPN2R203NC transistor equivalent, field effect transistor.
(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 1.8 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V.
* Power Management Switches
2. Features
(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 1.8 mΩ (typ.) (VGS = .
Image gallery
Download