TPW4R008NH - Silicon N-channel MOSFET

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Toshiba

Part number	TPW4R008NH
Manufacturer	Toshiba
File Size	798.11 KB
Description	Silicon N-channel MOSFET
Datasheet	TPW4R008NH Datasheet
Additional preview pages of the TPW4R008NH datasheet.

(1) High-speed switching (2) Small gate charge: QSW = 18 nC (typ. ) (3) Low drain-source on-resistance: RDS(ON) = 3.3 mΩ (typ. ) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V) (5) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit TPW4R008NH DSOP Advance 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain ©2015-2019 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2014-09 2019-10-21 Rev.4.0 TPW4R008N.

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Published: Mar 11, 2015 |