Datasheet4U Logo Datasheet4U.com

TRS10E65C - SiC Schottky Barrier Diode

Features

  • (1) Forward DC current: IF(DC) = 10 A (2) Repetitive peak reverse voltage: VRRM = 650 V 3. Packaging and Internal Circuit TRS10E65C 1: Cathode 2: Anode TO-220-2L 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit Repetitive peak reverse voltage Forward DC current Forward pulse current I2t limit value Junction temperature Storage temperature Mounting torque VRRM IF(DC) IFP I2t Tj Tstg TOR (Note 1) (Note 2) 650 10 100 12.5.

📥 Download Datasheet

Datasheet Details

Part number TRS10E65C
Manufacturer Toshiba
File Size 172.41 KB
Description SiC Schottky Barrier Diode
Datasheet download datasheet TRS10E65C Datasheet

📁 Similar Datasheet

Other Datasheets by Toshiba

Full PDF Text Transcription

Click to expand full text
SiC Schottky Barrier Diode TRS10E65C 1. Applications • Power Factor Correction • Solar Inverters • Uninterruptible Power Supplies • DC-DC Converters 2. Features (1) Forward DC current: IF(DC) = 10 A (2) Repetitive peak reverse voltage: VRRM = 650 V 3. Packaging and Internal Circuit TRS10E65C 1: Cathode 2: Anode TO-220-2L 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit Repetitive peak reverse voltage Forward DC current Forward pulse current I2t limit value Junction temperature Storage temperature Mounting torque VRRM IF(DC) IFP I2t Tj Tstg TOR (Note 1) (Note 2) 650 10 100 12.5 175 -55 to 175 0.6 V A A2s  Nm Note: Using continuously under heavy loads (e.g.
Published: |