• Part: TRS10E65C
  • Description: SiC Schottky Barrier Diode
  • Category: Diode
  • Manufacturer: Toshiba
  • Size: 172.41 KB
TRS10E65C Datasheet (PDF) Download

Related TRS10E65C Datasheets

Toshiba
TRS10E65C

Key Features

  • (1) Forward DC current: IF(DC) = 10 A (2) Repetitive peak reverse voltage: VRRM = 650 V
  • Packaging and Internal Circuit

Applications

  • Power Factor Correction
TRS10E65C datasheet preview