TRS10E65F Datasheet | Toshiba

Features (1) Chip design of 2nd generation. (2) High surge current capability : IFSM = 83A (Max) (3) The junction capacitance is small : Cj = 36 p F (Typ.) (4) The reverse current is small. : IR = 0.5 µA (Typ.) 3. Packaging and Internal Circuit TO-220-2L 1: Cathode 2: Anode ©2016-2018 Toshiba Electronic Devices & Storage Corporation Start of mercial production 2016-07 2018-06-27 Rev.2.0 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit Repetitive peak reverse voltage VRRM Forward DC current IF(DC) Forward pulse current (Note 1) Non-repetitive peak forward surge current IFSM (Note 2) I2t limit value I2t A2s Junction temperature Storage temperature Mounting torque Tj Tstg TOR 175 -55 to 175   Nm Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: t = 50 µs Note 2: f = 50 Hz (half-sine wave t = 10 ms) 5. Thermal Characteristics...