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TRS10E65F - SiC Schottky Barrier Diode

Key Features

  • (1) Chip design of 2nd generation. (2) High surge current capability : IFSM = 83A (Max) (3) The junction capacitance is small : Cj = 36 pF (Typ. ) (4) The reverse current is small. : IR = 0.5 µA (Typ. ) 3. Packaging and Internal Circuit TRS10E65F TO-220-2L 1: Cathode 2: Anode ©2016-2018 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2016-07 2018-06-27 Rev.2.0 TRS10E65F 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteris.

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Datasheet Details

Part number TRS10E65F
Manufacturer Toshiba
File Size 288.81 KB
Description SiC Schottky Barrier Diode
Datasheet download datasheet TRS10E65F Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SiC Schottky Barrier Diode TRS10E65F 1. Applications • Power Factor Correction • Solar Inverters • Uninterruptible Power Supplies • DC-DC Converters 2. Features (1) Chip design of 2nd generation. (2) High surge current capability : IFSM = 83A (Max) (3) The junction capacitance is small : Cj = 36 pF (Typ.) (4) The reverse current is small. : IR = 0.5 µA (Typ.) 3. Packaging and Internal Circuit TRS10E65F TO-220-2L 1: Cathode 2: Anode ©2016-2018 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2016-07 2018-06-27 Rev.2.0 TRS10E65F 4.