TRS10E65C Datasheet | Toshiba

Features (1) Forward DC current: IF(DC) = 10 A (2) Repetitive peak reverse voltage: VRRM = 650 V 3. Packaging and Internal Circuit 1: Cathode 2: Anode TO-220-2L 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit Repetitive peak reverse voltage Forward DC current Forward pulse current I2t limit value Junction temperature Storage temperature Mounting torque VRRM IF(DC) IFP I2t Tj Tstg TOR (Note 1) (Note 2) 650 10 100 12.5 175 -55 to 175 0.6 A2s  Nm Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: t = 100 µs Note 2: f = 50 Hz Start of mercial production 2013-08 2014-03-17 Rev.3.0 5. Thermal Characteristics Characteristics Thermal resistance (junction-to-case) Thermal resistance (junction-to-ambient) Symbol Rth(j-c)  Rth(j-a)  Test Condition 6. Electrical Characteristics (Unless otherwise specified, Ta = 25 ) Max Unit 2.05 /W 89 Characteristics Peak forward voltage Repetitive peak reverse current Junction capacitance 7. Marking Symbol Test Condition VFM(1) VFM(2) IRRM(1)...