TRS10V65H
TRS10V65H is SiC Schottky Barrier Diode manufactured by Toshiba.
Features
(1) Chip design of 3rd generation (2) Low forward voltage : VF = 1.2 V (typ.) (3) Low total capacitive charge: Qc = 27 n C (typ.) (4) Low reverse current: IR = 2.0 µA (typ.)
3. Packaging and Internal Circuit
DFN8x8
1, 2: N.C. 3, 4: Anode 5: Cathode (heatsink)
©2023
Toshiba Electronic Devices & Storage Corporation
Start of mercial production
2023-05
2023-04-10 Rev.1.0
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25
- )
Characteristics
Symbol Note
Rating
Unit
Repetitive peak reverse voltage Forward DC current
VRRM
IF(DC) (Note 1)
(Note 2)
Non-repetitive peak forward surge current
IFSM
(Note 3)
(Note 4)
(Note 5)
Power dissipation Junction temperature Storage temperature
(Note 2)
Tj
- Tstg
-55 to...
