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TRS10E65H - SiC Schottky Barrier Diode

Key Features

  • (1) Chip design of 3rd generation (2) Low forward voltage : VF = 1.2 V (typ. ) (3) Low total capacitive charge: Qc = 27 nC (typ. ) (4) Low reverse current: IR = 2.0 µA (typ. ) 3. Packaging and Internal Circuit TO-220-2L TRS10E65H 1: Cathode 2: Anode ©2023 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2023-05 2023-04-11 Rev.1.0 TRS10E65H 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25.
  • ) Characteristics Symbol Note Rating Unit.

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Datasheet Details

Part number TRS10E65H
Manufacturer Toshiba
File Size 426.78 KB
Description SiC Schottky Barrier Diode
Datasheet download datasheet TRS10E65H Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SiC Schottky Barrier Diode TRS10E65H 1. Applications • Power Factor Correction • Solar Inverters • Uninterruptible Power Supplies • DC-DC Converters 2. Features (1) Chip design of 3rd generation (2) Low forward voltage : VF = 1.2 V (typ.) (3) Low total capacitive charge: Qc = 27 nC (typ.) (4) Low reverse current: IR = 2.0 µA (typ.) 3. Packaging and Internal Circuit TO-220-2L TRS10E65H 1: Cathode 2: Anode ©2023 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2023-05 2023-04-11 Rev.1.0 TRS10E65H 4.