TRS10E65H Datasheet | Toshiba

Features (1) Chip design of 3rd generation (2) Low forward voltage : VF = 1.2 V (typ.) (3) Low total capacitive charge: Qc = 27 n C (typ.) (4) Low reverse current: IR = 2.0 µA (typ.) 3. Packaging and Internal Circuit TO-220-2L 1: Cathode 2: Anode ©2023 Toshiba Electronic Devices & Storage Corporation Start of mercial production 2023-05 2023-04-11 Rev.1.0 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 - ) Characteristics Symbol Note Rating Unit Repetitive peak reverse voltage Forward DC current Non-repetitive peak forward surge current Power dissipation Junction temperature Storage temperature Mounting torque VRRM IF(DC) IFSM PD Tj Tstg TOR (Note 1) (Note 2) (Note 3) (Note 4) (Note 5) (Note 2) 650 10 27 62 51 510 88 175 -55 to 175 0.6 - N- m Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Tc = 148 - Note 2: Tc = 25 - Note 3: f = 50 Hz (half-sine wave, t = 10 ms), Tc = 25 - Note 4: f = 50 Hz (half-sine wave, t = 10 ms), Tc = 150 - Note 5: Square wave, t = 10 µs, Tc = 25 - 5. Thermal Characteristics Characteristics Symbol Note Max Unit Thermal resistance (junction-to-case) Thermal resistance (junction-to-ambient) Note 1: Tc = 25- Note 2: Ta = 25-...