(1) Chip design of 3rd generation (2) Low forward voltage : VF = 1.2 V (typ.) (3) Low total capacitive charge: Qc = 6.5 nC (typ.) (4) Low reverse current: IR = 0.2 µA (ty.

* Power Factor Correction
* Solar Inverters
* Uninterruptible Power Supplies
* DC-DC Converters 2. Featu.

SiC Schottky Barrier Diode

TRS2E65F

TRS2-0910

TRS2-0911

TRS2-0912

TRS2-0913

TRS2-0915

TRS2-0919

TRS2-0921

TRS2-0922

TRS2-0923

TRS2-1210

TRS2-1211

TRS2-1212

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