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TRS30N120HB Datasheet, Diode, Toshiba

TRS30N120HB Datasheet, Diode, Toshiba

TRS30N120HB

datasheet Download (Size : 438.70KB)

TRS30N120HB Datasheet
TRS30N120HB

datasheet Download (Size : 438.70KB)

TRS30N120HB Datasheet

TRS30N120HB Features and benefits

TRS30N120HB Features and benefits

(1) Chip design of 3rd generation (2) Low forward voltage : VF (Per Leg) = 1.27 V (typ.) (3) Low total capacitive charge: Qc (Per Leg) = 80 nC (typ.) (4) Low reverse curr.

TRS30N120HB Application

TRS30N120HB Application


* Power Factor Correction
* Solar Inverters
* Uninterruptible Power Supplies
* DC-DC Converters 2. Featu.

TRS30N120HB Description

TRS30N120HB Description

SiC Schottky Barrier Diode

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TRS30N120HB Page 1 TRS30N120HB Page 2 TRS30N120HB Page 3

TAGS

TRS30N120HB
SiC
Schottky
Barrier
Diode
Toshiba

Manufacturer


Toshiba (https://www.toshiba.com/)

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