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TTC008 Datasheet - Toshiba

TTC008 NPN Transistor

TTC008 Features

* (1) High collector-emitter voltage: VCEO = 285 V, VCES = 600 V (2) High DC current gain: hFE = 100 to 200 (IC = 0.3 A) (3) Excellent switching times: tf = 0.1 µs (typ.) 3. Packaging and Internal Circuit TTC008 New PW-Mold2 1. Base 2. Collector 3. Emitter Start of commercial production 2010-05 1

TTC008-Toshiba.pdf

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Datasheet Details

Part number:

TTC008

Manufacturer:

Toshiba ↗

File Size:

173.24 KB

Description:

Npn transistor.

TTC008 Distributor

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TTC008 TTC008 NPN Transistor Toshiba