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Toshiba Electronic Components Datasheet

TTC008 Datasheet

NPN Transistor

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Bipolar Transistors Silicon NPN Triple-Diffused Type
TTC008
1. Applications
• High-Speed High-Voltage Switching
• Switching Voltage Regulators
• High-Speed DC-DC Converters
2. Features
(1) High collector-emitter voltage: VCEO = 285 V, VCES = 600 V
(2) High DC current gain: hFE = 100 to 200 (IC = 0.3 A)
(3) Excellent switching times: tf = 0.1 µs (typ.)
3. Packaging and Internal Circuit
TTC008
New PW-Mold2
1. Base
2. Collector
3. Emitter
Start of commercial production
2010-05
1
2014-04-03
Rev.2.0


Toshiba Electronic Components Datasheet

TTC008 Datasheet

NPN Transistor

No Preview Available !

TTC008
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
600
V
Collector-emitter voltage
VCES
600
Collector-emitter voltage
VCEO
285
Emitter-base voltage
VEBO
7
Collector current (DC)
(Note 1)
IC
1.5
A
Collector current (pulsed)
(Note 1)
ICP
3
Base current
IB
0.75
Collector power dissipation
PC
1.1
W
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to 150
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Ensure that the junction temperature does not exceed 150 .
2
2014-04-03
Rev.2.0


Part Number TTC008
Description NPN Transistor
Maker Toshiba
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TTC008 Datasheet PDF






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