TW015Z65C mosfet equivalent, silicon carbide n-channel mosfet.
(1) Chip design of 3rd generation (Built-in SiC schottky barrier diode) (2) Low diode forward voltage: VDSF = -1.35 V (typ.) (3) High voltage: VDSS = 650 V (4) Low drain-.
* Switching Voltage Regulators
2. Features
(1) Chip design of 3rd generation (Built-in SiC schottky barrier diode) (.
Image gallery
Download