Part number:
TW015Z65C
Manufacturer:
File Size:
639.84 KB
Description:
Silicon carbide n-channel mosfet.
* (1) Chip design of 3rd generation (Built-in SiC schottky barrier diode) (2) Low diode forward voltage: VDSF = -1.35 V (typ.) (3) High voltage: VDSS = 650 V (4) Low drain-source on-resistance: RDS(ON) = 15 mΩ (typ.) (5) Less susceptible to malfunction due to high threshold voltage: Vth = 3.0 to 5.0 V
TW015Z65C Datasheet (639.84 KB)
TW015Z65C
639.84 KB
Silicon carbide n-channel mosfet.
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