TW015Z65C Datasheet Silicon Carbide N-channel MOSFET

Manufacturer: Toshiba

Overview: MOSFETs Silicon Carbide N-Channel MOS TW015Z65C TW015Z65C 1. Applications • Switching Voltage Regulators 2.

Datasheet Details

Part number	TW015Z65C
Manufacturer	Toshiba
File Size	639.84 KB
Description	Silicon Carbide N-Channel MOSFET
Datasheet	TW015Z65C-Toshiba.pdf

(1) Chip design of 3rd generation (Built-in SiC schottky barrier diode) (2) Low diode forward voltage: VDSF = -1.35 V (typ. ) (3) High voltage: VDSS = 650 V (4) Low drain-source on-resistance: RDS(ON) = 15 mΩ (typ. ) (5) Less susceptible to malfunction due to high threshold voltage: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 11.7 mA) (6) Recommended gate - source drive voltage: VGS_on = 18 V, VGS_off = 0 V (7) Enhancement mode. 3. Packaging and Internal Circuit TO-247-4L(X) 1. Drain (heatsink) 2. Sour.

Part Number	Description
TW015Z120C	Silicon Carbide N-Channel MOSFET
TW015N120C	Silicon N-channel MOSFET
TW015N65C	Silicon Carbide N-Channel MOSFET
TW027N65C	Silicon N-channel MOSFET
TW027Z65C	Silicon Carbide N-Channel MOSFET
TW030N120C	Silicon Carbide N-Channel MOSFET
TW030Z120C	Silicon Carbide N-Channel MOSFET
TW031V65C	Silicon Carbide N-Channel MOSFET
TW045N120C	Silicon N-channel MOSFET
TW045Z120C	Silicon Carbide N-Channel MOSFET