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XPH4R714MC Datasheet - Toshiba

XPH4R714MC - Silicon P-Channel MOSFET

XPH4R714MC Features

* (1) AEC-Q101 qualified (2) Small, thin package (3) Low drain-source on-resistance: RDS(ON) = 3.6 mΩ (typ.) (VGS = -10 V) (4) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V) (5) Enhancement mode: Vth = -1.0 to -2.1 V (VDS = -10 V, ID = -1 mA) 3. Packaging and Internal Circuit XPH4R714MC SOP

XPH4R714MC-Toshiba.pdf