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Toshiba Electronic Components Datasheet

1SS361 Datasheet

DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION)

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1SS361 pdf
TOSHIBA Diode Silicon Epitaxial Planar Type
1SS361
Ultra High Speed Switching Application
z Small package
z Low forward voltage
: VF = 0.9V (typ.)
z Fast reverse recovery time : trr = 1.6ns (typ.)
z Small total capacitance : CT = 0.9pF (typ.)
1SS361
Unit in mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
VRM
85 V
Reverse voltage
VR 80 V
Maximum (peak) forward current
IFM
300 *
mA
Average forward current
IO
100 *
mA
Surge current (10ms)
IFSM
2* A
Power dissipation
P 100 mW
Junction temperature
Storage temperature
Tj 125 °C JEDEC
Tstg
55~125
°C JEITA
TOSHIBA
1-2S1B
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
Weight: 2.4mg (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* Unit rating. Total rating = unit rating × 1.5
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Reverse recovery time
Symbol
VF (1)
VF (2)
VF (3)
IR (1)
IR (2)
CT
trr
Test
Circuit
Test Condition
IF = 1mA
IF = 10mA
IF = 100mA
VR = 30V
VR = 80V
VR = 0, f = 1MHz
IF = 10mA, Fig.1
Min Typ. Max Unit
0.60
0.72
V
0.90 1.20
― ― 0.1
― ― 0.5 μA
0.9 3.0 pF
1.6 4.0 ns
1 2007-11-01


Toshiba Electronic Components Datasheet

1SS361 Datasheet

DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION)

No Preview Available !

1SS361 pdf
Marking
1SS361
Fig.1 Reverse Recovery Time (trr) Test Circuit
2 2007-11-01


Part Number 1SS361
Description DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION)
Maker Toshiba Semiconductor
Total Page 3 Pages
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1SS361 pdf
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