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1SV325 Datasheet - Toshiba Semiconductor

1SV325_ToshibaSemiconductor.pdf

1SV325 Datasheet Preview — Preview of 1SV325 PDF

Datasheet Details

Part number:

1SV325

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

136.09 KB

Description:

Silicon diode.

1SV325, Silicon Diode

TOSHIBA Diode Silicon Epitaxial Planar Type 1SV325 1SV325 TCXO/VCO * High capacitance ratio: C1V / C4V = 4.3 (typ.) * Low series resistance: rs = 0.4 Ω (typ.) * Useful for small size tuner.
Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Reverse voltage Junction temperature Storage temperature range VR 10 V Tj 125 °C Tstg *55 to 125 °C Note: Using continuously under heavy loads (e.g.
the application of high temperature/cu

1SV325 Distributors

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1SV325 Silicon Diode Toshiba Semiconductor

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