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1SV328 - Silicon Diode

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1SV328 TOSHIBA Diode Silicon Epitaxial Planar Type 1SV328 VCO for UHF Band Radio · · · High capacitance ratio: C1 V/C4 V = 2.8 (typ.) Low series resistance: rs = 0.55 Ω (typ.) Useful for small size tuner. Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Reverse voltage Junction temperature Storage temperature range Symbol VR Tj Tstg Rating 10 125 -55~125 Unit V °C °C JEDEC JEITA TOSHIBA ― ― 1-1E1A Electrical Characteristics (Ta = 25°C) Characteristics Reverse voltage Reverse current Capacitance Capacitance Capacitance ratio Series resistance Symbol VR IR C1 V C4 V C1 V/C4 V rs I R = 1 mA VR = 10 V VR = 1 V, f = 1 MHz VR = 4 V, f = 1 MHz ¾ VR = 1 V, f = 470 MHz Test Condition Weight: 0.004 g (typ.) Min 10 ¾ 5.7 1.85 2.7 ¾ Typ. ¾ ¾ ¾ ¾ 2.8 0.55 Max ¾ 3 6.7 2.45 ¾ 0.
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