Datasheet4U Logo Datasheet4U.com

2SA1225 - Silicon PNP Transistor

Features

  • your.

📥 Download Datasheet

📁 Similar Datasheet

  • 2SA1225 - PNP Transistor (JCST)
  • 2SA1225 - Silicon PNP Transistor (Inchange Semiconductor)
  • 2SA1220 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SA1220 - PNP Transistor (INCHANGE)
  • 2SA1220A - SILICON POWER TRANSISTOR (SavantIC)
  • 2SA1220A - PNP Transistor (INCHANGE)
  • 2SA1221 - PNP SILICON EPITAXIAL TRANSISTOR (NEC)
  • 2SA1222 - PNP SILICON EPITAXIAL TRANSISTOR (NEC)
  • 2SA1226 - PNP SILICON EPITAXIAL TRANSISTOR (NEC)
  • 2SA1227 - SILICON POWER TRANSISTOR (SavantIC)
Other Datasheets by Toshiba Semiconductor

Full PDF Text Transcription

Click to expand full text
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1225 Power Amplifier Applications Driver Stage Amplifier Applications 2SA1225 Unit: mm • High transition frequency: fT = 100 MHz (typ.) • Complementary to 2SC2983 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −160 V Collector-emitter voltage VCEO −160 V Emitter-base voltage VEBO −5 V Collector current Base current Collector power dissipation Ta = 25°C Tc = 25°C IC IB PC −1.5 −0.3 1.0 15 A A W Junction temperature Storage temperature range Tj 150 °C Tstg −55 to 150 °C JEDEC ― Note: Using continuously under heavy loads (e.g. the application of high JEITA ― temperature/current/voltage and the significant change in temperature, etc.
Published: |