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2SC2782A
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
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2SC2782A
Unit in mm : Po = 80W (Min.) (f = 175MHz, VCC = 12.5V, Pi = 18W)
VHF BAND POWER AMPLIFIER APPLICATIONS
z Output Power
ABSOLUTE MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC PC Tj Tstg RATING 36 16 4 20 220 175 −65~175 UNIT V V V A W °C °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the JEDEC — reliability significantly even if the operating conditions (i.e.
2SC2782A Datasheet
