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HG Semiconductors
2sc2782HG RF POWER TRANSISTOR
ROHS Compliance,Silicon NPN POWER TRANSISTOR
2SC2782
VHF BAND POWER AMPLIFIER APPLICATIONS
Output Power
: Po = 80W (Min.) (f = 175MHz, VCC = 12.5V, Pi = 18W)
MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage C ollector C urrent Collector Power Dissipation Junction T em perature Storage Temperature Range
SYM B OL
V CBO V CEO V EBO
IC CP Tj T stg
AT RING
36 16 4 20 220 175 65~175
UNIT
V V V A W °C °C
Unit in mm
JEDEC EIAJ TOSHIBA Weight: 5.5g
— —
2 C1A
Note : Above parameters , ratings , limits and conditions are subject to change
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Sep.
2SC2782 Datasheet
