HGSemi 2SC2782
Silicon NPN POWER TRANSISTOR
| Part No. | 2SC2782 |
|---|---|
| Datasheet | 2SC2782 Download |
| Manufacturer |  HGSemi |
| Description | Silicon NPN POWER TRANSISTOR |
| Buy | Stock & Price |
APPLICATIONS
Output Power : Po = 80W (Min.) (f = 175MHz, VCC = 12.5V, Pi = 18W)MAXIMUM RATINGS
(Tc = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage C ollector C urrent Collector Power Dissipation Junction T em perature Storage Temperature Range SYM B OL V CBO V CEO V EBO IC CP Tj T stg AT RING 36 16 4 20 220 175 65~175 UNIT V V V A W °C °C Unit in mm JEDEC EIAJ TOSHIBA Weight: 5.5g — — 2 C1A Note : Above parameters , ratings , limits and conditions are subject to change Sep. 1998 HG Semiconductors 2SC2782HG RF POWER TRANSISTOR ROHS Compliance,Silicon NPN POWER TRANSISTOR 2SC2782ELECTRICAL CHARACTERISTICS
(Tc = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage D C C urrentG ain Collector Output Capacitance O utputP ow er P ow er G ain Collector Efficiency Series Equivalent Input Impedance Series Equivalent Output Impedance V(BR) C...