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2SC2782 - NPN SILICON RF POWER TRANSISTOR

General Description

The ASI 2SC2782 is a12.5 V epitaxial silicon NPN transistor.

Designed primarily for VHF power amplifer application up to175 MHz band.

Key Features

  • 175 MHz 12.5 V.
  • PG = 6.4 dB at 80 W/175 MHz.
  • Omnigold™ Metalization System.
  • Common Emitter configuration DIM A B C .210 / 5.33 .835 / 21.21 .200 / 5.08 .490 / 12.45 .003 / 0.08 D E F G H I J K L M N .120 / 3.05 .970 / 24.64 .090 / 2.29 .150 / 3.81 B G 2 .725/18,42 F 4 E K H M INIM UM inches / m m M L J I M AXIM UM inches / m m .150 / 3.43 .045 / 1.14 .160 / 4.06 .220 / 5.59 .865 / 21.97 .210 / 5.33 .510 / 12.95 .007 / 0.18 .125 / 3.18 .725 / 18.42.

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Datasheet Details

Part number 2SC2782
Manufacturer ASI
File Size 47.50 KB
Description NPN SILICON RF POWER TRANSISTOR
Datasheet download datasheet 2SC2782 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SC2782 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2SC2782 is a12.5 V epitaxial silicon NPN transistor. Designed primarily for VHF power amplifer application up to175 MHz band. PACKAGE STYLE .500 6L FLG C A 3 D 1 2x Ø N FULL R FEATURES: • 175 MHz 12.5 V • PG = 6.4 dB at 80 W/175 MHz • Omnigold™ Metalization System • Common Emitter configuration DIM A B C .210 / 5.33 .835 / 21.21 .200 / 5.08 .490 / 12.45 .003 / 0.08 D E F G H I J K L M N .120 / 3.05 .970 / 24.64 .090 / 2.29 .150 / 3.81 B G 2 .725/18,42 F 4 E K H M INIM UM inches / m m M L J I M AXIM UM inches / m m .150 / 3.43 .045 / 1.14 .160 / 4.06 .220 / 5.59 .865 / 21.97 .210 / 5.33 .510 / 12.95 .007 / 0.18 .125 / 3.18 .725 / 18.42 .980 / 24.89 .105 / 2.67 .170 / 4.32 .285 / 7.24 .135 / 3.