Datasheet4U Logo Datasheet4U.com

2SC2782 - Silicon NPN Transistor

📥 Download Datasheet

Datasheet Details

Part number 2SC2782
Manufacturer Toshiba
File Size 135.54 KB
Description Silicon NPN Transistor
Datasheet download datasheet 2SC2782 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2782 2SC2782 VHF BAND POWER AMPLIFIER APPLICATIONS Output Power : Po = 80W (Min.) (f = 175MHz, VCC = 12.5V, Pi = 18W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC PC Tj Tstg RATING 36 16 4 20 220 175 −65~175 UNIT V V V A W °C °C Unit in mm JEDEC EIAJ TOSHIBA Weight: 5.5g — — 2−13C1A 000707EAA1 • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress.