2SC5755 - Silicon NPN Epitaxial Type Transistor

Toshiba

Datasheet Details

Part number	2SC5755
Manufacturer	Toshiba
File Size	141.90 KB
Description	Silicon NPN Epitaxial Type Transistor
Datasheet	2SC5755 Datasheet

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www.DataSheet4U.com 2SC5755 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5755 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications · · · High DC current gain: hFE = 400 to 1000 (IC = 0.2 A) Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max) High-speed switching: tf = 25 ns (typ.) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range DC t = 10 s DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC (Note) Tj Tstg Rating 20 10 7 2 3.5 200 500 750 150 -55 to 150 Unit V V V A mA mW °C °C JEDEC JEITA TOSHIBA ― ― 2-3S1C Weight: 0.01 g (typ.