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2SC5976 - Silicon NPN Transistor

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TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5976 2SC5976 High-Speed Switching Applications DC-DC Converter Applications Strobe Flash Applications +0.2 2.8-0.3 +0.2 1.6-0.1 Unit: mm 0.4±0.1 • High DC current gain: hFE = 250 to 400 (IC = 0.3 A) • Low collector-emitter saturation voltage: VCE (sat) = 0.14 V (max) • High-speed switching: tf = 25 ns (typ.) Absolute Maximum Ratings (Ta = 25°C) 2.9±0.2 1.9±0.2 0.95 0.95 1 2 3 0.16±0.05 0.15 0.7±0.05 Characteristics Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEX 50 V Collector-emitter voltage VCEO 30 V Emitter-base voltage VEBO 6 V DC IC Collector current Pulse ICP 3.0 A 5.0 Base current IB 0.3 A Collector power dissipation (t=10s) 1.00 PC (Note.
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