The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5976
2SC5976
High-Speed Switching Applications DC-DC Converter Applications Strobe Flash Applications
+0.2 2.8-0.3
+0.2 1.6-0.1
Unit: mm
0.4±0.1
• High DC current gain: hFE = 250 to 400 (IC = 0.3 A) • Low collector-emitter saturation voltage: VCE (sat) = 0.14 V (max) • High-speed switching: tf = 25 ns (typ.)
Absolute Maximum Ratings (Ta = 25°C)
2.9±0.2 1.9±0.2 0.95 0.95
1
2
3
0.16±0.05
0.15
0.7±0.05
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEX
50
V
Collector-emitter voltage
VCEO
30
V
Emitter-base voltage
VEBO
6
V
DC
IC
Collector current
Pulse
ICP
3.0 A
5.0
Base current
IB
0.3
A
Collector power dissipation (t=10s)
1.00
PC (Note.
2SC5976 Datasheet
