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Toshiba Electronic Components Datasheet

2SC5976 Datasheet

Transistor Silicon NPN Epitaxial Type Transistor

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TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5976
2SC5976
High-Speed Switching Applications
DC-DC Converter Applications
Strobe Flash Applications
High DC current gain: hFE = 250 to 400 (IC = 0.3 A)
Low collector-emitter saturation voltage: VCE (sat) = 0.14 V (max)
High-speed switching: tf = 25 ns (typ.)
www.DataSheMeat4xUi.cmoumm Ratings (Ta = 25°C)
+0.2
2.8-0.3
+0.2
1.6-0.1
Unit: mm
1
23
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power dissipation (t=10s)
Total collector power dissipation (DC)
Junction temperature
Storage temperature range
VCBO
VCEX
VCEO
VEBO
IC
ICP
IB
PC (Note.1)
Tj
Tstg
50
50
30
6
3.0
5.0
0.3
1.00
0.625
150
55 to 150
V
V
V
V
A
A
W
°C
°C
1.Base
2.Emitter
3.Collector
JEDEC
JEITA
TOSHIBA
Note 1: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2)
23S1A
1 2004-07-01


Toshiba Electronic Components Datasheet

2SC5976 Datasheet

Transistor Silicon NPN Epitaxial Type Transistor

No Preview Available !

Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
Rise time
Switching time
Storage time
www.DataSheet4U.com
Fall time
Symbol
Test Condition
ICBO
IEBO
V (BR) CEO
hFE (1)
hFE (2)
VCE (sat)
VBE (sat)
Cob
tr
tstg
tf
VCB = 50 V, IE = 0
VEB = 6 V, IC = 0
IC = 10 mA, IB = 0
VCE = 2 V, IC = 0.3 A
VCE = 2 V, IC = 1.0 A
IC = 1.0 A, IB =33mA
IC = 1.0 A, IB =33mA
VCB = 10 V, IE = 0, f=1MHz
See Figure 1.
VCC 12V, RL = 12
IB1 = −IB2 = 33 mA
2SC5976
Min Typ. Max Unit
⎯ ⎯ 0.1 μA
⎯ ⎯ 0.1 μA
30 ⎯ ⎯ V
250 400
120
0.14
V
1.10
V
18 pF
40
320
ns
25
20 µs
IB1 IB1
Input
IB2
Duty cycle < 1%
IB2
VCC
Output
Figure 1 Switching Time Test Circuit & Timing Chart
MARKING
W
Part No. (or abbreviation code)
W
Lot code (year)
Dot: even year
No dot: odd year
Lot code (month)
2 2004-07-01


Part Number 2SC5976
Description Transistor Silicon NPN Epitaxial Type Transistor
Maker Toshiba Semiconductor
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2SC5976 Datasheet PDF





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