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2SJ676
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (π−MOS V)
2SJ676
Switching Regulator, DC/DC Converter and Motor Drive Applications
Unit: mm
z Low drain-source ON-resistance: RDS (ON) = 1.6 Ω (typ.) z High forward transfer admittance: |Yfs| = 2.0 S (typ.) z Low leakage current: IDSS = −100 μA (max) (VDS = −200 V) z Enhancement mode: Vth = −1.5 to −3.
2SJ676 Datasheet
