2SJ676 P-Channel MOSFET

Toshiba Semiconductor

Description

2SJ676 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (π *MOS V) 2SJ676 Switching Regulator, DC/DC Converter and Motor Drive Appli.

📥 Download Datasheet

2SJ676 Datasheet Preview — Preview of 2SJ676 PDF

Datasheet Specifications

Part number: 2SJ676
Manufacturer: Toshiba ↗ Semiconductor
File Size: 157.25 KB
Datasheet: 2SJ676_ToshibaSemiconductor.pdf
Description: P-Channel MOSFET

Applications

* Unit: mm z Low drain-source ON-resistance: RDS (ON) = 1.6 Ω (typ. ) z High forward transfer admittance: |Yfs| = 2.0 S (typ. ) z Low leakage current: IDSS =
* 100 μA (max) (VDS =
* 200 V) z Enhancement mode: Vth =
* 1.5 to
* 3.5 V (VDS =
* 10 V, ID =
* 1 mA)

2SJ676 Distributors

📁 Related Datasheet

2SJ670 2SJ673 2SJ600 2SJ601 2SJ602 2SJ603

📌 All Tags

2SJ676 P-Channel MOSFET Toshiba Semiconductor

Toshiba Semiconductor 2SJ676-like datasheet