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Toshiba Electronic Components Datasheet

2SJ676 Datasheet

MOSFET

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2SJ676
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (πMOS V)
2SJ676
Switching Regulator, DC/DC Converter and
Motor Drive Applications
Unit: mm
z Low drain-source ON-resistance: RDS (ON) = 1.6 (typ.)
z High forward transfer admittance: |Yfs| = 2.0 S (typ.)
z Low leakage current: IDSS = 100 μA (max) (VDS = 200 V)
z Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drainsource voltage
Draingate voltage (RGS = 20 k)
Gatesource voltage
Drain current
DC (Note 1)
Pulse(Note 1)
Drain power dissipation
Single-pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
200
200
±20
2.5
10
1.3
191
2.5
0.13
150
55~150
V
V
V
A
A
W
mJ
A
mJ
°C
°C
JEDEC
JEITA
TOSHIBA
2-8M1B
Weight: 0.54 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability
test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic
Symbol
Max Unit
Thermal resistance, channel to ambient
Rth (cha)
96.1 °C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 50 V, Tch = 25°C (initial), L = 48.6 mH, RG = 25 , IAR = 2.5 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1 2009-09-29
Free Datasheet http://www.datasheet4u.com/


Toshiba Electronic Components Datasheet

2SJ676 Datasheet

MOSFET

No Preview Available !

Electrical Characteristics (Ta = 25°C)
2SJ676
Characteristic
Symbol
Test Condition
Gate leakage current
Drain cutoff current
Drainsource breakdown voltage
Gate threshold voltage
Drainsource ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turnon time
Fall time
Turnoff time
IGSS
IDSS
V (BR) DSS
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
tr
ton
tf
toff
VGS = ±16 V, VDS = 0 V
VDS = 200 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 1.5 A
VDS = 10 V, ID = 1.5 A
VDS = 10 V, VGS = 0 V, f = 1 MHz
VGS0 V
10 V
ID = 1.5 A
Output
RL =
66.7 Ω
VDD ∼− 100 V
Duty 1%, tw = 10 μs
Total gate charge (gatesource
plus gatedrain)
Gatesource charge
Gatedrain (“Miller”) charge
Qg
Qgs VDD ≈ −160 V, VGS = 10 V, ID = 2.5 A
Qgd
Min
200
1.5
1.0
Typ.
1.6
2.0
410
40
145
Max
±10
100
3.5
2.0
Unit
μA
μA
V
V
S
pF
— 20 —
— 45 —
ns
— 15 —
— 85 —
— 10 —
— 6 — nC
—4—
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristic
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
IDR = 2.5 A, VGS = 0 V
IDR = 2.5 A, VGS = 0 V
dlDR / dt = 100 A / μs
Min Typ. Max Unit
— — 2.5 A
— — 10 A
— — 2.0 V
— 135 —
ns
— 0.81 —
μC
Marking
J676
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Part No. (or abbreviation code)
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Lot No.
Note 4
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
2 2009-09-29
Free Datasheet http://www.datasheet4u.com/


Part Number 2SJ676
Description MOSFET
Maker Toshiba Semiconductor
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2SJ676 Datasheet PDF





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