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Toshiba Electronic Components Datasheet

2SK1544 Datasheet

Silicon N Channel MOS Type Field Effect Transistor

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2SK1544
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII.5)
2SK1544
DCDC Converter and Motor Drive Applications
Unit: mm
z Low drainsource ON resistance : RDS (ON) = 0.15 (typ.)
z High forward transfer admittance : |Yfs| = 21 S (typ.)
z Low leakage current
: IDSS = 300 μA (max) (VDS = 500 V)
z Enhancement mode
: Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
Draingate voltage (RGS = 20 k)
Gatesource voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
Tch
Tstg
500
500
±30
25
100
200
150
55~150
V
V
V
A
W
°C
°C
JEDEC
JEITA
TOSHIBA
2-21F1B
Weight: 9.75 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Rth (chc)
Rth (cha)
0.625
35.7
°C / W
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
This transistor is an electrostatic-sensitive device.
Please handle with caution.
1 2006-11-02


Toshiba Electronic Components Datasheet

2SK1544 Datasheet

Silicon N Channel MOS Type Field Effect Transistor

No Preview Available !

Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Gate leakage current
Drain cutoff current
Drainsource breakdown voltage
Gate threshold voltage
Drainsource ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
IGSS
IDSS
V (BR) DSS
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
VGS = ±25 V, VDS = 0 V
VDS = 500 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 13 A
VDS = 10 V, ID = 13 A
VDS = 10 V, VGS = 0 V, f = 1 MHz
Rise time
tr
Switching time
Turnon time
Fall time
ton
tf
Turnoff time
Total gate charge (Gatesource
plus gatedrain)
Gatesource charge
Gatedrain (“miller”) charge
toff
Qg
Qgs VDD 400 V, VGS = 10 V, ID = 25 A
Qgd
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovered charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
IDR = 25 A, VGS = 0 V
IDR = 25 A, VGS = 0 V
dIDR / dt = 100 A / μs
Marking
TOSHIBA
2SK1544
JAPAN
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2SK1544
Min Typ. Max Unit
— — ±100
— — 300
500 —
1.5 — 3.5
— 0.15 0.20
10 21 —
— 3700 —
— 400 —
— 920 —
nA
μA
V
V
S
pF
— 185 —
— 240 —
— 250 —
ns
— 590 —
— 150 —
— 70 —
— 80 —
nC
Min Typ. Max Unit
— — 25 A
— — 100 A
— — 1.6 V
— 780 —
ns
— 9.8 — μC
2 2006-11-02


Part Number 2SK1544
Description Silicon N Channel MOS Type Field Effect Transistor
Maker Toshiba Semiconductor
Total Page 6 Pages
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