2SK246
Key Features
- High breakdown voltage: VGDS = -50 V
- High input impedance: IGSS = -1 nA (max) (VGS = -30 V)
Datasheets by Manufacturer
| Part Number | Manufacturer | Description |
|---|---|---|
| K2467 | Toshiba | 2SK2467 |
| K2462 | NEC | 2SK2462 |
| 2SK2464 | SANYO | N-Channel Silicon MOSFET |
| K2466 | Toshiba | 2SK2466 |
| 2SK2461 | NEC | N-Channel MOSFET |
| 2SK2462 | NEC | SWITCHING N-CHANNEL POWER MOSFET |
| 2SK2463 | ROHM | Small switching Transistors |
| 2SK2461 | Inchange Semiconductor | N-Channel MOSFET |
| 2SK2469-01MR | Fuji Electric | N-channel MOS-FET |
| 2SK2408 | Hitachi Semiconductor | Silicon N-Channel MOSFET |