2SK246 Datasheet | Toshiba

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type For Constant Current, Impedance Converter and DC-AC High Input Impedance Amplifier Circuit Applications Unit: mm - High breakdown voltage: VGDS = - 50 V - High input impedance: IGSS = - 1 n A (max) (VGS = - 30 V) Maximum Ratings (Ta = 25°C) Characteristics Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range Symbol VGDS IG PD Tj Tstg Rating -50 10 300 125 -55~125 Unit V m A m W °C °C Electrical Characteristics (Ta = 25°C) JEDEC TO-92 JEITA SC-43 TOSHIBA 2-5F1C Weight: 0.21 g (typ.) Characteristics Symbol Test Condition Gate cut-off current Gate-drain breakdown voltage Drain current Gate-source cut-off voltage Forward transfer admittance Input capacitance Reverse transfer capacitance IGSS V (BR) GDS VGS = -30 V, VDS = 0 VDS = 0, IG = -100 m A IDSS VDS = 10 V, VGS = 0 (Note) VGS (OFF) VDS = 10 V, ID = 0.1 m A ïYfsï VDS = 10 V, VGS = 0, f = 1 k Hz Ciss VDS = 10 V, VGS = 0, f = 1 MHz Crss VDG = 10 V, ID = 0, f = 1...