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TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK246
For Constant Current, Impedance Converter and DC-AC High Input Impedance Amplifier Circuit Applications
2SK246
Unit: mm
· High breakdown voltage: VGDS = −50 V · High input impedance: IGSS = −1 nA (max) (VGS = −30 V)
Maximum Ratings (Ta = 25°C)
Characteristics
Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range
Symbol
VGDS IG PD Tj Tstg
Rating
-50 10 300 125 -55~125
Unit
V mA mW °C °C
Electrical Characteristics (Ta = 25°C)
JEDEC
TO-92
JEITA
SC-43
TOSHIBA
2-5F1C
Weight: 0.21 g (typ.
2SK246 Datasheet
