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2SK3077A
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK3077A
VHF/UHF Band Amplifier Applications
Unit: mm Output power: Po ≥ 20.5dBmW Gain: Gp ≥ 10.5dB Drain Efficiency: ηD ≥ 50%
· · ·
Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Gate-source voltage Drain current Power dissipation Channel temperature Storage temperature range Symbol VDSS VGSS ID PD Tch Tstg Rating 10 5 0.1 0.1 150 −45~150 Unit V V A W °C °C
Marking
4 3 1, 3 Source 2 Gate 4 Drain
JEDEC JEITA TOSHIBA
― ― 2-2K1D
WA
1
2
Electrical Characteristics (Ta = 25°C)
Characteristics Output power Drain efficiency Power gain Threshold voltage Drain cut-off current Gate-source leakage current Symbol PO ηD GP Vth IDSS IGSS (Note 1) ¾ Test Condition VDS = 4.
2SK3077A Datasheet
