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TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK330
For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications
2SK330
Unit: mm
• High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1 nA (max) (VGS = −30 V) • Low RDS (ON): RDS (ON) = 320 Ω (typ.) (IDSS = 5 mA) • Complementary to 2SJ105
• Small package
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Gate-drain voltage
VGDS −50 V
Gate current
IG 10 mA
Drain power dissipation
PD 200 mW
Junction temperature
Tj 125 °C
Storage temperature range
Tstg
−55~125
°C
Note:
Using continuously under heavy loads (e.g. the application of
JEDEC
―
high temperature/current/voltage and the significant change in temperature, etc.
2SK330 Datasheet
