2SK330
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications
Unit: mm
- High breakdown voltage: VGDS =
- 50 V
- High input impedance: IGSS =
- 1 n A (max) (VGS =
- 30 V)
- Low RDS (ON): RDS (ON) = 320 Ω (typ.) (IDSS = 5 m A)
- plementary to 2SJ105
- Small package
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Gate-drain voltage
VGDS
- 50 V
Gate current
IG 10 m A
Drain power dissipation
PD 200 m W
Junction temperature
Tj 125 °C
Storage temperature range
Tstg
- 55~125
°C
Note:
Using continuously under heavy loads (e.g. the application of
JEDEC
― high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the
JEITA
― reliability significantly even if the operating conditions (i.e.
TOSHIBA
2-4E1B operating temperature/current/voltage, etc.) are within the absolute maximum...
