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2SK4059TK - Silicon N-Channel MOS Type FET

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Part number 2SK4059TK
Manufacturer Toshiba Semiconductor
File Size 180.20 KB
Description Silicon N-Channel MOS Type FET
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2SK4059TK TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK4059TK For ECM • Application for compact ECM 0.22±0.05 1.2±0.05 0.8±0.05 0.32±0.05 3 2 0.1±0.05 Unit: mm Absolute Maximum Ratings (Ta=25°C) 0.45 0.45 1.4±0.05 www.DataSheet4U.com Characteristic Symbol VGDO IG PD Tj Tstg Rating -20 10 100 125 −55~125 Unit V mA mW °C Gate-Drain voltage Gate Current Drain power dissipation (Ta = 25°C) Junction Temperature Storage temperature range Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.
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