* . Low Drain-Source ON Resistance : RdS(ON) = 0.1Q (Typ.) . High Forward Transfer Admittance : lYf s l=4S (Typ.) . Low Leakage Current : lGSS=±100nA(Max. ) @ Vgs=±20V IDS S= 1mA (Max.) @ VDS =60V . Enhancement-Mode : V t h=l
* 5 ~ 3. 5V @ lD=lmA MAXIMUM RATINGS (Ta=25°C) CHARACTERISTI
2SK417
Toshiba ↗ Semiconductor
44.13 KB
Silicon n-channel mosfet.
SILICON N CHANNEL MOS TYPE (7T-MOS) HIGH SPEED SWITCHING APPLICATIONS. SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. INDUSTRIAL.
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