Datasheet Summary
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Power MOS FETs
This product plies with the RoHS Directive (EU 2002/95/EC).
Silicon N-channel enhancement MOS FET
For high speed switching circuits
- Features
- Gate-source surrender voltage VGSS : ±25 V guaranteed
- Avalanche energy capability guaranteed: EAS > 216 mJ
- High-speed switching: tf = 90 ns (typ.)
-...