2SK417 - Silicon N-Channel MOSFET

Toshiba

Key Features

. Low Drain-Source ON Resistance : RdS(ON) = 0.1Q (Typ. ) . High Forward Transfer Admittance : lYf s l=4S (Typ. ) . Low Leakage Current : lGSS=±100nA(Max. ) @ Vgs=±20V IDS S= 1mA (Max. ) @ VDS =60V . Enhancement-Mode : V t h=l.
5 ~ 3. 5V @ lD=lmA.

2SK417 silicon n-channel mosfet by Toshiba - Datasheet Preview

Datasheet Details

Part number	2SK417
Manufacturer	Toshiba
File Size	44.13 KB
Description	Silicon N-Channel MOSFET
Datasheet	2SK417 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SILICON N CHANNEL MOS TYPE (7T-MOS) HIGH SPEED SWITCHING APPLICATIONS. SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm 1Q3MAX. FEATURES . Low Drain-Source ON Resistance : RdS(ON) = 0.1Q (Typ.) . High Forward Transfer Admittance : lYf s l=4S (Typ.) . Low Leakage Current : lGSS=±100nA(Max. ) @ Vgs=±20V IDS S= 1mA (Max.) @ VDS =60V . Enhancement-Mode : V t h=l • 5 ~ 3. 5V @ lD=lmA MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Drain-Source Voltage VDSX 60 Gate-Source Voltage Vgss ±20 Drain Current DC Pulse Drain Power Dissipation (Tc=25°C) Channel Temperature Storage Temperature Range ID Idp Tc h _stg_ ELECTRICAL CHARACTERISTICS (Ta=25°C) 10 15 60 150 -55-150 1. GATE Z. DRAIN (HEAT SINK) 3.