Datasheet Summary
SILICON N CHANNEL MOS TYPE (7T-MOS)
HIGH SPEED SWITCHING APPLICATIONS.
SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS.
INDUSTRIAL APPLICATIONS Unit in mm
1Q3MAX.
Features
. Low Drain-Source ON Resistance : RdS(ON) = 0.1Q (Typ.)
. High Forward Transfer Admittance : lYf s l=4S (Typ.)
. Low Leakage Current : lGSS=±100nA(Max. ) @ Vgs=±20V
IDS S= 1mA (Max.) @ VDS =60V
. Enhancement-Mode
: V t h=l
- 5 ~ 3. 5V @ lD=lmA
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC
SYMBOL RATING UNIT
Drain-Source Voltage
VDSX
Gate-Source Voltage
Vgss
±20
Drain Current
DC Pulse
Drain Power Dissipation (Tc=25°C)
Channel Temperature
Storage Temperature Range
ID Idp
Tc h...
