2SK418 - N-Channel Transistor

Toshiba

Key Features

. High Breakdown Voltage : V(BR)DSS= 400V . High Forward Transfer Admittance : lYf s ]=1.2S (Typ. ) . Low Leakage Current : lGSS=±100nA(Max. ) @ Vgs=±20V . Enhancement-Mode IDS S= 1mA (Max. ) @ VD s=400V : Vth= l-5 ~ 3.5V @ In=lmA.

2SK418 n-channel transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	2SK418
Manufacturer	Toshiba
File Size	41.75 KB
Description	N-Channel Transistor
Datasheet	2SK418 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SILICON N CHANNEL MPS TYPE (7T-MOS) 2SK41 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS. SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. FEATURES .High Breakdown Voltage : V(BR)DSS= 400V . High Forward Transfer Admittance : lYf s ]=1.2S (Typ.) . Low Leakage Current : lGSS=±100nA(Max. ) @ Vgs=±20V . Enhancement-Mode IDS S= 1mA (Max.) @ VD s=400V : Vth= l-5 ~ 3.5V @ In=lmA INDUSTRIAL APPLICATIONS Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage SYMBOL VDSX VGSS RATING 400 ±20 UNIT V Drain Current DC Pulse Drain Power Dissipation (Tc=25°C) Channel Temperature Storage Temperature Range ID Idp Pd Tch T stg ELECTRICAL CHARACTERISTICS (Ta=25°C). L OATE 2. DRAIN (HEAT SINK) 3.