3SK199
TOSHIBA Field Effect Transistor Silicon N Channel Dual Gate MOS Type
3SK199
TV Tuner, UHF RF Amplifier Applications
Unit: mm
· Superior cross modulation performance. · Low reverse transfer capacitance: Crss = 0.015 pF (typ.) · Low noise figure: NF = 1.9dB (typ.)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage Gate 1-source voltage Gate 2-source voltage Drain current Drain power dissipation Channel temperature Storage temperature range
Symbol
VDS VG1S VG2S
ID PD Tch Tstg
Rating
13.5 ±8 ±8 30 150 125 -55~125
Unit
V V V mA mW °C °C
Electrical Characteristics (Ta = 25°C)
JEDEC
―
JEITA
―
TOSHIBA
2-3J1A
Weight: 0.013 g (typ.
3SK199 Datasheet
