C5000
C5000 is 2SC5000 manufactured by Toshiba.
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5000
Power Amplifier Applications
2SC5000
Unit: mm
- Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 5 A)
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 80 V
Collector-emitter voltage
VCEO 50 V
Emitter-base voltage
VEBO 7 V
Collector current
IC 10 A
Base current
IB 1 A
Collector power dissipation
PC 25 W
Junction temperature
Tj 150 °C
Storage temperature range
Tstg
- 55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
JEDEC
― temperature/current/voltage and the significant change in
JEITA
― temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
TOSHIBA
2-10R1A operating temperature/current/voltage, etc.) are within the
Weight: 1.7 g (typ.) absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
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