TOSHIBA Transistor Silicon NPN Epitaxial Type
Power Amplifier Applications
• Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 5 A)
Absolute Maximum Ratings (Tc = 25°C)
VCBO 80 V
VCEO 50 V
VEBO 7 V
IC 10 A
IB 1 A
Collector power dissipation
PC 25 W
Tj 150 °C
Storage temperature range
−55 to 150
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
Weight: 1.7 g (typ.)
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).