GT10G131 Datasheet - Toshiba Semiconductor

GT10G131 Silicon N-Channel IGBT

GT10G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10G131 Strobe Flash Applications Unit: mm 5th generation (trench gate structure) IGBT Enhancement-mode 4-V gate drive voltage: VGE = 4.0 V (min) (@IC = 200 A) Peak collector current: IC = 200 A (max) Built-in zener diode between gate and emitter SOP-8 package Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-emitter volta.

GT10G131-ToshibaSemiconductor.pdf