Datasheet Details
| Part number | GT10G131 |
|---|---|
| Manufacturer | Toshiba |
| File Size | 245.60 KB |
| Description | Silicon N-Channel IGBT |
| Datasheet |
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|
|
| Part number | GT10G131 |
|---|---|
| Manufacturer | Toshiba |
| File Size | 245.60 KB |
| Description | Silicon N-Channel IGBT |
| Datasheet |
|
|
|
|
GT10G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10G131 Strobe Flash Applications Unit: mm • 5th generation (trench gate structure) IGBT • Enhancement-mode • 4-V gate.
| Part Number | Description |
|---|---|
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| GT10J303 | Silicon N-Channel IGBT |
| GT10J311 | Silicon N-Channel IGBT |
| GT10J312 | Silicon N-Channel IGBT |
| GT10J321 | Silicon N-Channel IGBT |
| GT10Q101 | Silicon N-Channel IGBT |
| GT10Q301 | Silicon N-Channel IGBT |
| GT10Q311 | Silicon N-Channel IGBT |
| GT15G101 | Silicon N-Channel IGBT |
| GT15J101 | Silicon N-Channel IGBT |