| Part number | GT10J303 |
|---|---|
| Datasheet | GT10J303_ToshibaSemiconductor.pdf |
| File Size | 534.11 KB |
| Manufacturer | Toshiba |
| Description | Silicon N-Channel IGBT |
|
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.DataSheet.co.kr GT10J303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10J303 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS z Third-generation IGBT z Enhancement mode type z High speed z Low saturation voltage : tf = 0.30μs (Max.) (IC = 10A) : VCE (sat) = 2.7V (Max.) (IC = 10A) Unit:.
| Part Number | Description |
|---|---|
| GT10J301 | Silicon N-Channel IGBT |
| GT10J311 | Silicon N-Channel IGBT |
| GT10J312 | Silicon N-Channel IGBT |
| GT10J321 | Silicon N-Channel IGBT |
| GT10G131 | Silicon N-Channel IGBT |
| GT10Q101 | Silicon N-Channel IGBT |
| GT10Q301 | Silicon N-Channel IGBT |
| GT10Q311 | Silicon N-Channel IGBT |
| GT15G101 | Silicon N-Channel IGBT |
| GT15J101 | Silicon N-Channel IGBT |
