| Part number | GT10G131 |
|---|---|
| Download | GT10G131 Datasheet (PDF) |
| File Size | 245.60 KB |
| Manufacturer | Toshiba |
| Description | Silicon N-Channel IGBT |
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| Part Number | Description |
|---|---|
| GT10J301 | Silicon N-Channel IGBT |
| GT10J303 | Silicon N-Channel IGBT |
| GT10J311 | Silicon N-Channel IGBT |
| GT10J312 | Silicon N-Channel IGBT |
| GT10J321 | Silicon N-Channel IGBT |
GT10G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10G131 Strobe Flash Applications Unit: mm 5th generation (trench gate structure) IGBT Enhancement-mode 4-V gate drive voltage: VGE = 4.0 V (min) (@IC = 200 A) Peak collector current:.
