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GT10G131
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT10G131
Strobe Flash Applications
Unit: mm
• 5th generation (trench gate structure) IGBT • Enhancement-mode • 4-V gate drive voltage: VGE = 4.0 V (min) (@IC = 200 A) • Peak collector current: IC = 200 A (max) • Built-in zener diode between gate and emitter • SOP-8 package
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-emitter voltage
VCES
400
V
Gate-emitter voltage
DC
VGES
±6
V
Pulse
VGES
±8
Collector current
Pulse
(Note 1)
ICP
200
A
Collector power
(Note 2a)
PC (1)
1.9
W
dissipation(t=10 s)
(Note 2b)
PC (2)
1.0
W
Junction temperature Storage temperature range
Tj
150
°C
Tstg
−55~150
°C
Note: Using continuously under heavy loads (e.g.
GT10G131 Datasheet
