Datasheet Summary
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
Strobe Flash Applications
Unit: mm
- 5th generation (trench gate structure) IGBT
- Enhancement-mode
- 4-V gate drive voltage: VGE = 4.0 V (min) (@IC = 200 A)
- Peak collector current: IC = 200 A (max)
- Built-in zener diode between gate and emitter
- SOP-8...