GT10G131 - Silicon N-Channel IGBT

Toshiba Semiconductor

Datasheet Details

Part number	GT10G131
Manufacturer	Toshiba Semiconductor
File Size	245.60 KB
Description	Silicon N-Channel IGBT
Datasheet	GT10G131 Datasheet
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GT10G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10G131 Strobe Flash Applications Unit: mm • 5th generation (trench gate structure) IGBT • Enhancement-mode • 4-V gate drive voltage: VGE = 4.0 V (min) (@IC = 200 A) • Peak collector current: IC = 200 A (max) • Built-in zener diode between gate and emitter • SOP-8 package Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-emitter voltage VCES 400 V Gate-emitter voltage DC VGES ±6 V Pulse VGES ±8 Collector current Pulse (Note 1) ICP 200 A Collector power (Note 2a) PC (1) 1.9 W dissipation(t=10 s) (Note 2b) PC (2) 1.0 W Junction temperature Storage temperature range Tj 150 °C Tstg −55~150 °C Note: Using continuously under heavy loads (e.g.

Published: Sep 3, 2014 |