Datasheet Summary
TOSHIBA
Preliminary
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT
High Power Switching Applications Fast Switching Applications
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The 4th generation Enhancement-mode Fast Switching(FS) :Operating frequency up to 150kHz(Reference)
- :t High speed f=0.03μs(typ.)
- Low switching loss :Eon=0.26mJ(typ.) :Eoff=0.18mJ(typ.) Low saturation voltage :VCE(sat)=2.0V(typ.) FRD included between emitter and collector
Maximum Ratings (Ta=25℃)
Characteristic Collector-emitter voltage Gate-emitter voltage Collector current Emitter-collector forward current Collector power dissipation (Tc=25℃) Junction temperature Storage temperature range DC 1ms DC...