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TOSHIBA
Preliminary
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT
GT10J321
GT10J321
High Power Switching Applications Fast Switching Applications
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The 4th generation Enhancement-mode Fast Switching(FS) :Operating frequency up to 150kHz(Reference) ● :t High speed f=0.03μs(typ.) ● Low switching loss :Eon=0.26mJ(typ.) :Eoff=0.18mJ(typ.) Low saturation voltage :VCE(sat)=2.0V(typ.
GT10J321 Datasheet
