GT10J321 - Silicon N-Channel IGBT

Toshiba Semiconductor

Datasheet Details

Part number	GT10J321
Manufacturer	Toshiba Semiconductor
File Size	158.70 KB
Description	Silicon N-Channel IGBT
Datasheet	GT10J321 Datasheet
Additional preview pages of the GT10J321 datasheet.

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Full PDF Text Transcription

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TOSHIBA Preliminary TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT GT10J321 GT10J321 High Power Switching Applications Fast Switching Applications ●　 ●　 ●　 ●　 ●　 The 4th generation Enhancement-mode Fast Switching(FS) :Operating frequency up to 150kHz(Reference) ●　 :t High speed f=0.03μs(typ.) ●　 Low switching loss :Eon=0.26mJ(typ.) :Eoff=0.18mJ(typ.) Low saturation voltage :VCE(sat)=2.0V(typ.

Published: Mar 23, 2005 |