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GT10J321

Manufacturer: Toshiba
GT10J321 datasheet preview

Datasheet Details

Part number GT10J321
Datasheet GT10J321_ToshibaSemiconductor.pdf
File Size 158.70 KB
Manufacturer Toshiba
Description Silicon N-Channel IGBT
GT10J321 page 2 GT10J321 page 3

GT10J321 Overview

TOSHIBA Preliminary TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT GT10J321 GT10J321 High Power Switching Applications Fast Switching Applications The 4th generation Enhancement-mode Fast Switching(FS) :Operating frequency up to.

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